| PART |
Description |
Maker |
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| GS88136BGD-300I GS88132BT-200 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS88032T--11.5I GS88036T--11.5I GS88036T-100I GS88 |
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 18 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
|
| GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 |
512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Electronic Theatre Controls, Inc.
GSI Technology
|
| GS88032BT-300 GS88018BT-300I GS88032BT-150 GS88036 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
http://
|
| GS880F36BT-7.5IV GS880F36BT-6.5IV GS880F36BT-6.5V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
http://
|
| GS880E32BT-250IV GS880E32BT-200IV GS880E32BT-200V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS816272C-166I GS816272C-133I GS816218D-150 GS8162 |
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 256K X 72 CACHE SRAM, 7 ns, PBGA209
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 256K X 72 CACHE SRAM, 8.5 ns, PBGA209
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165
1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| GS881E18T-100 GS881E18T-100I GS881E18T-11 GS881E18 |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| GS882V36BB-200 GS882V18BB-200 GS882V18BB-300 GS882 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
http://
|
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